Comparative study of GeO2/Ge and SiO2/Si structures on anomalous charging of oxide films upon water adsorption revealed by ambient-pressure X-ray photoelectron spectroscopy

Mori, Daichi; Oka, Hiroshi; Hosoi, Takuji; Kawai, Kentaro; Morita, Mizuho; Crumlin, Ethan J.; Liu, Zhi; Watanabe, Heiji; Arima, Kenta

doi:10.1063/1.4962202

Title: Comparative study of GeO₂/Ge and SiO₂/Si structures on anomalous charging of oxide films upon water adsorption revealed by ambient-pressure X-ray photoelectron spectroscopy

Journal Article · Fri Sep 02 00:00:00 EDT 2016 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4962202· OSTI ID:1377479

Mori, Daichi ^[1]; Oka, Hiroshi ^[2]; Hosoi, Takuji ^[2]; Kawai, Kentaro ^[1]; Morita, Mizuho ^[1]; Crumlin, Ethan J. ^[3]; Liu, Zhi ^[3]; Watanabe, Heiji ^[2];

^[1]

Osaka Univ. (Japan). Graduate School of Engineering. Dept. of Precision Science and Technology
Osaka Univ. (Japan). Graduate School of Engineering. Dept. of Material and Life Science
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Advanced Light Source

The energy difference between the oxide and bulk peaks in X-ray photoelectron spectroscopy (XPS) spectra was investigated in this paper for both GeO₂/Ge and SiO₂/Si structures with thickness-controlled water films. This was achieved by obtaining XPS spectra at various values of relative humidity (RH) of up to ~15%. The increase in the energy shift is more significant for thermal GeO₂ on Ge than for thermal SiO₂ on Si above ~10^-4% RH, which is due to the larger amount of water molecules that infiltrate into the GeO₂ film to form hydroxyls. Analyzing the origins of this energy shift, we propose that the positive charging of a partially hydroxylated GeO₂ film, which is unrelated to X-ray irradiation, causes the larger energy shift for GeO₂/Ge than for SiO₂/Si. A possible microscopic mechanism of this intrinsic positive charging is the emission of electrons from adsorbed water species in the suboxide layer of the GeO₂ film to the Ge bulk, leaving immobile cations or positively charged states in the oxide. Finally, this may be related to the reported negative shift of flat band voltages in metal-oxide-semiconductor diodes with an air-exposed GeO₂ layer.

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Research Organization:: Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES); Japan Society for the Promotion of Science (JSPS) (Japan); Murata Science Foundation (Japan); Mikiya Science and Technology Foundation (Japan)

Grant/Contract Number:: AC02-05CH11231; JP24686020; JP26630026; JP16K14133

OSTI ID:: 1377479

Journal Information:: Journal of Applied Physics, Vol. 120, Issue 9; ISSN 0021-8979

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 11 works

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Title: Comparative study of GeO2/Ge and SiO2/Si structures on anomalous charging of oxide films upon water adsorption revealed by ambient-pressure X-ray photoelectron spectroscopy

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Title: Comparative study of GeO₂/Ge and SiO₂/Si structures on anomalous charging of oxide films upon water adsorption revealed by ambient-pressure X-ray photoelectron spectroscopy