EUVL mask substrate specifications (wafer-type)
The Extreme Ultraviolet Lithography (EUVL) program currently is constructing an alpha-class exposure tool known as the Engineering Test Stand (ETS) that will employ 200mm wafer format masks. This report lists and explains the current specifications for the EUVL mask substrates suitable for use on the ETS. The shape and size of the mask are the same as those of a standard 200mm Si wafer. The flatness requirements are driven by the potential image placement distortion caused by the non-telecentric illumination of EUVL. The defect requirements are driven by the printable-defect size and desired yield for mask blank fabrication. Surface roughness can cause both a loss of light throughput and image speckle. The EUVL mask substrate must be made of low-thermal-expansion material because 40% of the light is absorbed by the multilayers and causes some uncorrectable thermal distortion during printing.
- Research Organization:
- Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)
- Sponsoring Organization:
- USDOE Office of Defense Programs (DP) (US)
- DOE Contract Number:
- W-7405-ENG-48
- OSTI ID:
- 13758
- Report Number(s):
- UCRL-ID-135579; TRN: AH200135%%320
- Resource Relation:
- Other Information: PBD: 1 Jul 1999
- Country of Publication:
- United States
- Language:
- English
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