Stranski–Krastanov InAs/GaAsSb quantum dots coupled with sub-monolayer quantum dot stacks as a promising absorber for intermediate band solar cells

Kim, Yeongho; Cho, Il-Wook; Ryu, Mee-Yi; Kim, Jun Oh; Lee, Sang Jun; Ban, Keun-Yong; Honsberg, Christiana B.

doi:10.1063/1.4999437

Title: Stranski–Krastanov InAs/GaAsSb quantum dots coupled with sub-monolayer quantum dot stacks as a promising absorber for intermediate band solar cells

Journal Article · Mon Aug 14 00:00:00 EDT 2017 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4999437· OSTI ID:1375503

Kim, Yeongho ^[1];

^[2]; Ryu, Mee-Yi ^[2];

^[1]; Lee, Sang Jun ^[1]; Ban, Keun-Yong ^[3]; Honsberg, Christiana B. ^[3]

Division of Metrology for Future Technology, Korea Research Institute of Standards and Science, Daejeon 305-340, South Korea
Department of Physics, Kangwon National University, Kangwon-Do 200-701, South Korea
School of Electrical, Computer and Energy Engineering, Arizona State University, Tempe, Arizona 85287, USA

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Sponsoring Organization:: USDOE

Grant/Contract Number:: EEC-1041895

OSTI ID:: 1375503

Journal Information:: Applied Physics Letters, Journal Name: Applied Physics Letters Vol. 111 Journal Issue: 7; ISSN 0003-6951

Publisher:: American Institute of PhysicsCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 20 works

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References (20)

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Self-assembled InAs/GaAs quantum dots studied with excitation dependent cathodoluminescence Tang, Y.; Rich, D. H.; Mukhametzhanov, I. Journal of Applied Physics, Vol. 84, Issue 6 https://doi.org/10.1063/1.368490	journal	September 1998
Quantum dot strain engineering of InAs∕InGaAs nanostructures Seravalli, L.; Minelli, M.; Frigeri, P. Journal of Applied Physics, Vol. 101, Issue 2 https://doi.org/10.1063/1.2424523	journal	January 2007
Reducing carrier escape in the InAs/GaAs quantum dot intermediate band solar cell Antolín, E.; Martí, A.; Farmer, C. D. Journal of Applied Physics, Vol. 108, Issue 6 https://doi.org/10.1063/1.3468520	journal	September 2010
Phonon broadening of excitons in GaAs/ ${Al}_{x}$ ${Ga}_{1 - x}$ As quantum wells Gammon, D.; Rudin, S.; Reinecke, T. L. Physical Review B, Vol. 51, Issue 23 https://doi.org/10.1103/PhysRevB.51.16785	journal	June 1995
Submonolayer quantum dot infrared photodetector Ting, David Z. -Y.; Bandara, Sumith V.; Gunapala, Sarath D. Applied Physics Letters, Vol. 94, Issue 11 https://doi.org/10.1063/1.3095812	journal	March 2009
Model for intermediate band solar cells incorporating carrier transport and recombination Lin, Albert S.; Wang, Weiming; Phillips, Jamie D. Journal of Applied Physics, Vol. 105, Issue 6 https://doi.org/10.1063/1.3093962	journal	March 2009
Properties of photoluminescence in type-II GaAsSb/GaAs multiple quantum wells Chiu, Y. S.; Ya, M. H.; Su, W. S. Journal of Applied Physics, Vol. 92, Issue 10 https://doi.org/10.1063/1.1513200	journal	November 2002
Production of Photocurrent due to Intermediate-to-Conduction-Band Transitions: A Demonstration of a Key Operating Principle of the Intermediate-Band Solar Cell Martí, A.; Antolín, E.; Stanley, C. R. Physical Review Letters, Vol. 97, Issue 24 https://doi.org/10.1103/PhysRevLett.97.247701	journal	December 2006
Many-body effects on modulation-doped InAs/GaAs quantum dots Lee, Joo In; Lee, Hyung Gyoo; Shin, Eun-joo Applied Physics Letters, Vol. 70, Issue 21 https://doi.org/10.1063/1.119031	journal	May 1997
Carrier relaxation and electronic structure in InAs self-assembled quantum dots Schmidt, K. H.; Medeiros-Ribeiro, G.; Oestreich, M. Physical Review B, Vol. 54, Issue 16 https://doi.org/10.1103/PhysRevB.54.11346	journal	October 1996
Absorption, carrier lifetime, and gain in inas~gaas quantum-dot infrared photodetectors Kochman, B.; Stiff-Roberts, A. D.; Chakrabarti, S. IEEE Journal of Quantum Electronics, Vol. 39, Issue 3 https://doi.org/10.1109/JQE.2002.808169	journal	March 2003
Arrays of Two-Dimensional Islands Formed by Submonolayer Insertions: Growth, Properties, Devices Krestnikov, I. L.; Ledentsov, N. N.; Hoffmann, A. physica status solidi (a), Vol. 183, Issue 2 https://doi.org/10.1002/1521-396X(200102)183:2<207::AID-PSSA207>3.0.CO;2-2	journal	February 2001
Impact of size, shape, and composition on piezoelectric effects and electronic properties of $In (Ga) As ∕ Ga As$ quantum dots Schliwa, Andrei; Winkelnkemper, Momme; Bimberg, Dieter Physical Review B, Vol. 76, Issue 20 https://doi.org/10.1103/PhysRevB.76.205324	journal	November 2007
Atomic Structure of Buried InAs Sub-Monolayer Depositions in GaAs Lenz, Andrea; Eisele, Holger; Becker, Jonas Applied Physics Express, Vol. 3, Issue 10 https://doi.org/10.1143/APEX.3.105602	journal	October 2010
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