Influence of doping with In, As, Sn, and Ce on the luminescence of Zn{sub 2}SiO{sub 4}-Mn{sup 2+}
- Bogatskii Physicochemical Institute, Odessa (Ukraine)
The optical properties and the luminescence of Zn{sub 2}SiO{sub 4}-Mn{sup 2+} doped with As{sup 5+},Sn{sup 4+},In{sup 3+}, and Ce{sup 3+} were investigated. Doping with In enhances the brightness of luminescence by 15-20%. In the presence of In{sup 3+}, Ce{sup 3+}, and Sn{sup 4+}, the duration of afterglow increased by 15-30% (especially at the late stages of decay). This was explained by the formation of electron traps of variable depth. The positions of the dopants are tentatively determined. When Zn{sup 2+} is replaced by In{sup 3+}, there appears an absorption band near 375 nm, which is due to defects associated with charge compensation. Defects of another type are produced when manganese ions in oxidation states higher than +2 substitute for Si{sup 4+}. Mn ions exhibit absorption bands in the visible region and have a pronounced effect on the brightness and duration of afterglow.
- OSTI ID:
- 135588
- Journal Information:
- Inorganic Materials, Vol. 30, Issue 12; Other Information: PBD: Dec 1994; TN: Translated from Neorganicheskie Materialy; 30: No. 12, 1563-1566(1994)
- Country of Publication:
- United States
- Language:
- English
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