Engineering the Structural and Electronic Phases of MoTe2 through W Substitution

Rhodes, D.; Chenet, D. A.; Janicek, B. E.; Nyby, C.; Lin, Y.; Jin, W.; Edelberg, D.; Mannebach, E.; Finney, N.; Antony, A.; Schiros, T.; Klarr, T.; Mazzoni, A.; Chin, M.; Chiu, Y. -c; Zheng, W.; Zhang, Q. R.; Ernst, F.; Dadap, J. I.; Tong, X.; Ma, J.; Lou, R.; Wang, S.; Qian, T.; Ding, H.; Osgood, R. M.; Paley, D. W.; Lindenberg, A. M.; Huang, P. Y.; Pasupathy, A. N.; Dubey, M.; Hone, J.; Balicas, L.

doi:10.1021/acs.nanolett.6b04814

Title: Engineering the Structural and Electronic Phases of MoTe₂ through W Substitution

Journal Article · Wed Feb 01 00:00:00 EST 2017 · Nano Letters

DOI:https://doi.org/10.1021/acs.nanolett.6b04814· OSTI ID:1353195

Rhodes, D. ^[1]; Chenet, D. A. ^[2]; Janicek, B. E. ^[3]; Nyby, C. ^[4]; Lin, Y. ^[5]; Jin, W. ^[5]; Edelberg, D. ^[6];

^[7]; Finney, N. ^[2]; Antony, A. ^[2]; Schiros, T. ^[8]; Klarr, T. ^[9]; Mazzoni, A. ^[9]; Chin, M. ^[9]; Chiu, Y. -c ^[1]; Zheng, W. ^[1]; Zhang, Q. R. ^[1]; Ernst, F. ^[10]; Dadap, J. I. ^[11]; Tong, X. ^[12] more »

Florida State Univ., Tallahassee, FL (United States). National High Magnetic Field Lab. (MagLab); Florida State Univ., Tallahassee, FL (United States). Dept. of Physics
Columbia Univ., New York, NY (United States). Dept. of Mechanical Engineering
Univ. of Illinois, Urbana-Champaign, IL (United States). Dept. of Materials Science and Engineering
Stanford Univ., CA (United States). Dept. of Chemistry
Columbia Univ., New York, NY (United States). Dept. of Applied Physics and Applied Mathematics
Columbia Univ., New York, NY (United States). Dept. of Physics
Stanford Univ., CA (United States). Dept. of Materials Science and Engineering
Columbia Univ., New York, NY (United States). Materials Research Science and Engineering Center; State Univ. of New York (SUNY), New York, NY (United States). Fashion Inst. of Technology (FIT), Dept. of Science and Mathematics
Army Research Lab., Adelphi, MD (United States). Sensors and Electronic Devices Directorate
Stanford Univ., CA (United States). Dept. of Applied Physics; SLAC National Accelerator Lab., Menlo Park, CA (United States). Photon Ultrafast Laser Science and Engineering Inst. (PULSE)
Columbia Univ., New York, NY (United States). Dept. of Electrical Engineering
Brookhaven National Lab. (BNL), Upton, NY (United States). Center for Functional Nanomaterials (CFN)
Chinese Academy of Sciences (CAS), Beijing (China). Beijing National Lab. for Condensed Matter Physics, and Inst. of Physics
Renmin Univ. of China, Beijing (China). Dept. of Physics
Columbia Univ., New York, NY (United States). Dept. of Electrical Engineering; Columbia Univ., New York, NY (United States). Dept. of Applied Physics and Applied Mathematics
Columbia Univ., New York, NY (United States). Dept. of Chemistry; Columbia Univ., New York, NY (United States). Columbia Nano Initiative
Stanford Univ., CA (United States). Dept. of Materials Science and Engineering; SLAC National Accelerator Lab., Menlo Park, CA (United States). Photon Ultrafast Laser Science and Engineering Inst. (PULSE); SLAC National Accelerator Lab., Menlo Park, CA (United States). Stanford Institute for Materials and Energy Science (SIMES)
Univ. of Illinois, Urbana-Champaign, IL (United States). Dept. of Mechanical Science and Engineering
Florida State Univ., Tallahassee, FL (United States). National High Magnetic Field Lab. (MagLab)

MoTe₂ is an exfoliable transition metal dichalcogenide (TMD) that crystallizes in three symmetries: the semiconducting trigonal-prismatic 2H- or α-phase, the semimetallic and monoclinic 1T'- or β-phase, and the semimetallic orthorhombic γ-structure. The 2H-phase displays a band gap of ~1 eV making it appealing for flexible and transparent optoelectronics. The γ-phase is predicted to possess unique topological properties that might lead to topologically protected nondissipative transport channels. Recently, it was argued that it is possible to locally induce phase-transformations in TMDs, through chemical doping, local heating, or electric-field to achieve ohmic contacts or to induce useful functionalities such as electronic phase-change memory elements. The combination of semiconducting and topological elements based upon the same compound might produce a new generation of high performance, low dissipation optoelectronic elements. Here, we show that it is possible to engineer the phases of MoTe2 through W substitution by unveiling the phase-diagram of the Mo_1–xW_xTe₂ solid solution, which displays a semiconducting to semimetallic transition as a function of x. We find that a small critical W concentration xc ~ 8% stabilizes the γ-phase at room temperature. Lastly, this suggests that crystals with x close to xc might be particularly susceptible to phase transformations induced by an external perturbation, for example, an electric field. Photoemission spectroscopy, indicates that the γ-phase possesses a Fermi surface akin to that of WTe₂.

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Research Organization:: SLAC National Accelerator Laboratory (SLAC), Menlo Park, CA (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: SC0012704; 2013CB921700; 2015CB921300; W911NF-11-1-0362; GBMF4545; AC02-76SF00515; FA9550-11-1-0010; FA9550-14-1-0268; NA0002135; FG02-04ER46157; 11234014; 11274381; 11474340; DMR-1610110; XDB07000000; LPDS 2013-13

OSTI ID:: 1353195

Journal Information:: Nano Letters, Vol. 17, Issue 3; ISSN 1530-6984

Publisher:: American Chemical SocietyCopyright Statement

Country of Publication:: United States

Language:: English

Citation Metrics:

Cited by: 111 works

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Title: Engineering the Structural and Electronic Phases of MoTe₂ through W Substitution