Design considerations for 193nm positive resists
- IBM Almaden Research Center, San Jose, CA (United States); and others
The explosive growth in performance of semiconductor devices has been fueled by advances in microlithography and photoresist technology. The current generation of advanced microprocessors and DRAM memory chips have critical dimensions approaching 0.5 microns and are built using novolak-based mid-UV photoresists. Next generation devices will be produced with optical lithography at shorter wavelengths (deep UV) combined with newer (chemically amplified) photoresists. The technology path toward device generations beyond 0.25 micron is currently the subject of some controversy. To extend optical lithography beyond 0.25 mcirons, we have developed a new class of photoresist materials for 193 nm (ArF excimer) lithography. Imaging chemistry is similar to that used in deep-UV lithography, but the materials are quite different due to optical absorbance considerations. We will discuss the materials issues involved in the design of a positive resists for 193 nm lithography with regard to optical properties, resolutoin, photospeed and etch resistance.
- OSTI ID:
- 126931
- Report Number(s):
- CONF-950402-; TRN: 95:006086-0997
- Resource Relation:
- Conference: 209. American Chemical Society (ACS) national meeting, Anaheim, CA (United States), 2-6 Apr 1995; Other Information: PBD: 1995; Related Information: Is Part Of 209th ACS national meeting; PB: 2088 p.
- Country of Publication:
- United States
- Language:
- English
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