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Title: Selective layer disordering in III-nitrides with a capping layer

Patent ·
OSTI ID:1257205
;

Selective layer disordering in a doped III-nitride superlattice can be achieved by depositing a dielectric capping layer on a portion of the surface of the superlattice and annealing the superlattice to induce disorder of the layer interfaces under the uncapped portion and suppress disorder of the interfaces under the capped portion. The method can be used to create devices, such as optical waveguides, light-emitting diodes, photodetectors, solar cells, modulators, laser, and amplifiers.

Research Organization:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
AC04-94AL85000
Assignee:
Sandia Corporation (Albuquerque, NM)
Patent Number(s):
9,368,677
Application Number:
14/540,686
OSTI ID:
1257205
Resource Relation:
Patent File Date: 2014 Nov 13
Country of Publication:
United States
Language:
English

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