Surface origin and control of resonance Raman scattering and surface band gap in indium nitride

Alarcón-Lladó, Esther; Brazzini, Tommaso; Ager, Joel W.

doi:10.1088/0022-3727/49/25/255102

Title: Surface origin and control of resonance Raman scattering and surface band gap in indium nitride

Journal Article · Mon May 23 00:00:00 EDT 2016 · Journal of Physics. D, Applied Physics

DOI:https://doi.org/10.1088/0022-3727/49/25/255102· OSTI ID:1254064

Alarcón-Lladó, Esther; Brazzini, Tommaso; Ager, Joel W.

Resonance Raman scattering measurements were performed on indium nitride thin films under conditions where the surface electron concentration was controlled by an electrolyte gate. As the surface condition is tuned from electron depletion to accumulation, the spectral feature at the expected position of the (E₁, A₁) longitudinal optical (LO) near 590 cm^-1 shifts to lower frequency. The shift is reversibly controlled with the applied gate potential, which clearly demonstrates the surface origin of this feature. The result is interpreted within the framework of a Martin double resonance, where the surface functions as a planar defect, allowing the scattering of long wavevector phonons. The allowed wavevector range, and hence the frequency, is modulated by the electron accumulation due to band gap narrowing. A surface band gap reduction of over 500 meV is estimated for the conditions of maximum electron accumulation. Under conditions of electron depletion, the full InN bandgap (E_g= 0.65 eV) is expected at the surface. The drastic change in the surface band gap is expected to influence the transport properties of devices which utilize the surface electron accumulation layer.

View Journal Article

Cite

Export

Save

Research Organization:: Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: AC02-05CH11231

OSTI ID:: 1254064

Alternate ID(s):: OSTI ID: 1254066; OSTI ID: 1530242

Journal Information:: Journal of Physics. D, Applied Physics, Journal Name: Journal of Physics. D, Applied Physics Vol. 49 Journal Issue: 25; ISSN 0022-3727

Publisher:: IOP PublishingCopyright Statement

Country of Publication:: United Kingdom

Language:: English

Citation Metrics:

Cited by: 19 works

Citation information provided by
Web of Science

References (48)

Quantized Electron Accumulation States in Indium Nitride Studied by Angle-Resolved Photoemission Spectroscopy Colakerol, Leyla; Veal, T. D.; Jeong, Hae-Kyung Physical Review Letters, Vol. 97, Issue 23 https://doi.org/10.1103/PhysRevLett.97.237601	journal	December 2006
Investigation on −c-InN and a-InN:Mg field effect transistors under electrolyte gate bias Lu, Yen-Sheng; Chang, Yuh-Hwa; Hong, Yu-Liang Applied Physics Letters, Vol. 95, Issue 10 https://doi.org/10.1063/1.3216064	journal	September 2009
Band-gap narrowing in heavily doped many-valley semiconductors Berggren, K. -F.; Sernelius, B. E. Physical Review B, Vol. 24, Issue 4 https://doi.org/10.1103/PhysRevB.24.1971	journal	August 1981
Effects of surface states on electrical characteristics of InN and ${In}_{1 - x} {Ga}_{x} N$ Yim, J. W. L.; Jones, R. E.; Yu, K. M. Physical Review B, Vol. 76, Issue 4 https://doi.org/10.1103/PhysRevB.76.041303	journal	July 2007
InN-based anion selective sensors in aqueous solutions Lu, Yen-Sheng; Huang, Chi-Cheng; Yeh, J. Andrew Applied Physics Letters, Vol. 91, Issue 20 https://doi.org/10.1063/1.2814035	journal	November 2007
Mg doped InN and confirmation of free holes in InN Wang, K.; Miller, N.; Iwamoto, R. Applied Physics Letters, Vol. 98, Issue 4 https://doi.org/10.1063/1.3543625	journal	January 2011
Raman scattering by the longitudinal optical phonon in InN: Wave-vector nonconserving mechanisms Demangeot, F.; Pinquier, C.; Frandon, J. Physical Review B, Vol. 71, Issue 10 https://doi.org/10.1103/PhysRevB.71.104305	journal	March 2005
Observation of the electron-accumulation layer at the surface of InN by cross-sectional micro-Raman spectroscopy Cho, YongJin; Ramsteiner, Manfred; Brandt, Oliver Applied Physics Letters, Vol. 102, Issue 7 https://doi.org/10.1063/1.4792837	journal	February 2013
Resonance raman scattering near critical points Martin, Richard M. Physical Review B, Vol. 10, Issue 6 https://doi.org/10.1103/PhysRevB.10.2620	journal	September 1974
Inelastic light scattering in hole-accumulation layers on silicon Abstreiter, G.; Claessen, U.; Tränkle, G. Solid State Communications, Vol. 44, Issue 5 https://doi.org/10.1016/0038-1098(82)90579-8	journal	November 1982
Localized surface optical phonon mode in the InGaN/GaN multiple-quantum-wells nanopillars: Raman spectrum and imaging Zhu, J. H.; Ning, J. Q.; Zheng, C. C. Applied Physics Letters, Vol. 99, Issue 11 https://doi.org/10.1063/1.3640233	journal	September 2011
Band-gap renormalization in quasi-two-dimensional systems induced by many-body electron-electron and electron-phonon interactions Das Sarma, S.; Jalabert, R.; Yang, S. -R. Eric Physical Review B, Vol. 39, Issue 8 https://doi.org/10.1103/PhysRevB.39.5516	journal	March 1989
When group-III nitrides go infrared: New properties and perspectives Wu, Junqiao Journal of Applied Physics, Vol. 106, Issue 1 https://doi.org/10.1063/1.3155798	journal	July 2009
Raman scattering on intrinsic surface electron accumulation of InN nanowires Jeganathan, K.; Purushothaman, V.; Debnath, R. K. Applied Physics Letters, Vol. 97, Issue 9 https://doi.org/10.1063/1.3483758	journal	August 2010
Experimental and theoretical studies of phonons in hexagonal InN Davydov, V. Yu.; Emtsev, V. V.; Goncharuk, I. N. Applied Physics Letters, Vol. 75, Issue 21 https://doi.org/10.1063/1.125330	journal	November 1999
Light Scattering in Solids IV Cardona, Manuel; Güntherodt, Gernot Topics in Applied Physics https://doi.org/10.1007/3-540-11942-6	book	January 1984
Optical properties of Si-doped InN grown on sapphire (0001) Inushima, T.; Higashiwaki, M.; Matsui, T. Physical Review B, Vol. 68, Issue 23 https://doi.org/10.1103/PhysRevB.68.235204	journal	December 2003
Multiphonon resonance Raman scattering in ${In}_{x} {Ga}_{1 - x} N$ Ager, J. W.; Walukiewicz, W.; Shan, W. Physical Review B, Vol. 72, Issue 15 https://doi.org/10.1103/PhysRevB.72.155204	journal	October 2005
Intrinsic Electron Accumulation at Clean InN Surfaces Mahboob, I.; Veal, T. D.; McConville, C. F. Physical Review Letters, Vol. 92, Issue 3 https://doi.org/10.1103/PhysRevLett.92.036804	journal	January 2004
Photoexcited carriers and surface recombination velocity in InN epilayers: A Raman scattering study Cuscó, Ramon; Ibáñez, Jordi; Alarcón-Lladó, Esther Physical Review B, Vol. 80, Issue 15 https://doi.org/10.1103/PhysRevB.80.155204	journal	October 2009
Quasiparticle properties of a coupled two-dimensional electron-phonon system Jalabert, R.; Das Sarma, S. Physical Review B, Vol. 40, Issue 14 https://doi.org/10.1103/PhysRevB.40.9723	journal	November 1989
Probing and modulating surface electron accumulation in InN by the electrolyte gated Hall effect Brown, G. F.; Ager, J. W.; Walukiewicz, W. Applied Physics Letters, Vol. 93, Issue 26 https://doi.org/10.1063/1.3062856	journal	December 2008
Ab initio phonon dispersions of wurtzite AlN, GaN, and InN Bungaro, Claudia; Rapcewicz, Krzysztof; Bernholc, J. Physical Review B, Vol. 61, Issue 10 https://doi.org/10.1103/PhysRevB.61.6720	journal	March 2000
High current density InN∕AlN heterojunction field-effect transistor with a SiNx gate dielectric layer Lin, Yu-Syuan; Koa, Shun-Hau; Chan, Chih-Yuan Applied Physics Letters, Vol. 90, Issue 14 https://doi.org/10.1063/1.2719223	journal	April 2007
Subband energies in accumulation layers on InP Abstreiter, G.; Huber, R.; Tränkle, G. Solid State Communications, Vol. 47, Issue 8 https://doi.org/10.1016/0038-1098(83)90770-6	journal	August 1983
$A_{1} (LO)$ phonon structure in degenerate InN semiconductor films Thakur, J. S.; Haddad, D.; Naik, V. M. Physical Review B, Vol. 71, Issue 11 https://doi.org/10.1103/PhysRevB.71.115203	journal	March 2005
k⋅p method for strained wurtzite semiconductors Chuang, S. L.; Chang, C. S. Physical Review B, Vol. 54, Issue 4 https://doi.org/10.1103/PhysRevB.54.2491	journal	July 1996
Effective electron mass and phonon modes in n -type hexagonal InN Kasic, A.; Schubert, M.; Saito, Y. Physical Review B, Vol. 65, Issue 11 https://doi.org/10.1103/PhysRevB.65.115206	journal	February 2002
Selective excitation of $E_{1} (LO)$ and $A_{1} (LO)$ phonons with large wave vectors in the Raman spectra of hexagonal InN Davydov, V. Yu.; Klochikhin, A. A.; Smirnov, A. N. Physical Review B, Vol. 80, Issue 8 https://doi.org/10.1103/PhysRevB.80.081204	journal	August 2009
Monitoring dopants by Raman scattering in an electrochemically top-gated graphene transistor Das, A.; Pisana, S.; Chakraborty, B. Nature Nanotechnology, Vol. 3, Issue 4 https://doi.org/10.1038/nnano.2008.67	journal	March 2008
Hole transport and photoluminescence in Mg-doped InN Miller, N.; Ager, J. W.; Smith, H. M. Journal of Applied Physics, Vol. 107, Issue 11 https://doi.org/10.1063/1.3427564	journal	June 2010
Surface- and point-defect-related Raman scattering in wurtzite semiconductors excited above the band gap Kranert, C.; Schmidt-Grund, R.; Grundmann, M. New Journal of Physics, Vol. 15, Issue 11 https://doi.org/10.1088/1367-2630/15/11/113048	journal	November 2013
Electrochemical gating of individual single-wall carbon nanotubes observed by electron transport measurements and resonant Raman spectroscopy Cronin, S. B.; Barnett, R.; Tinkham, M. Applied Physics Letters, Vol. 84, Issue 12 https://doi.org/10.1063/1.1666997	journal	March 2004
Double resonance Raman effects in InN nanowires Domènech-Amador, N.; Cuscó, R.; Calarco, R. physica status solidi (RRL) - Rapid Research Letters, Vol. 6, Issue 4 https://doi.org/10.1002/pssr.201206057	journal	March 2012
Dimensionality dependence of the band-gap renormalization in two- and three-dimensional electron-hole plasmas in GaAs Tränkle, G.; Leier, H.; Forchel, A. Physical Review Letters, Vol. 58, Issue 4 https://doi.org/10.1103/PhysRevLett.58.419	journal	January 1987
Evidence for phonon-plasmon interaction in $InN$ by Raman spectroscopy Pomeroy, J. W.; Kuball, M.; Swartz, C. H. Physical Review B, Vol. 75, Issue 3 https://doi.org/10.1103/PhysRevB.75.035205	journal	January 2007
Surface optical Raman modes in InN nanostructures Sahoo, Satyaprakash; Hu, M. S.; Hsu, C. W. Applied Physics Letters, Vol. 93, Issue 23 https://doi.org/10.1063/1.3040681	journal	December 2008
Surface charge accumulation of InN films grown by molecular-beam epitaxy Lu, Hai; Schaff, William J.; Eastman, Lester F. Applied Physics Letters, Vol. 82, Issue 11 https://doi.org/10.1063/1.1562340	journal	March 2003
Ionic liquid gated electric-double-layer transistors based on Mg-doped InN epitaxial films Chen, Z. Y.; Yuan, H. T.; Wang, X. Q. Applied Physics Letters, Vol. 103, Issue 25 https://doi.org/10.1063/1.4852175	journal	December 2013
Determining surface Fermi level pinning position of InN nanowires using electrolyte gating Khanal, D. R.; Walukiewicz, W.; Grandal, J. Applied Physics Letters, Vol. 95, Issue 17 https://doi.org/10.1063/1.3255010	journal	October 2009
Surface chemical modification of InN for sensor applications Lu, Hai; Schaff, William J.; Eastman, Lester F. Journal of Applied Physics, Vol. 96, Issue 6 https://doi.org/10.1063/1.1767608	journal	September 2004
Experimental determination of strain-free Raman frequencies and deformation potentials for the E2 high and A1(LO) modes in hexagonal InN Wang, Xinqiang; Che, Song-Bek; Ishitani, Yoshihiro Applied Physics Letters, Vol. 89, Issue 17 https://doi.org/10.1063/1.2364884	journal	October 2006
Mg-doped InN and InGaN – Photoluminescence, capacitance–voltage and thermopower measurements Ager, J. W.; Miller, N.; Jones, R. E. physica status solidi (b), Vol. 245, Issue 5 https://doi.org/10.1002/pssb.200778731	journal	May 2008
Surface Band-Gap Narrowing in Quantized Electron Accumulation Layers King, P. D. C.; Veal, T. D.; McConville, C. F. Physical Review Letters, Vol. 104, Issue 25 https://doi.org/10.1103/PhysRevLett.104.256803	journal	June 2010
Band structure of indium antimonide Kane, Evan O. Journal of Physics and Chemistry of Solids, Vol. 1, Issue 4 https://doi.org/10.1016/0022-3697(57)90013-6	journal	January 1957
Universality of electron accumulation at wurtzite c- and a-plane and zinc-blende InN surfaces King, P. D. C.; Veal, T. D.; McConville, C. F. Applied Physics Letters, Vol. 91, Issue 9 https://doi.org/10.1063/1.2775807	journal	August 2007
Identification of Hydroperoxy Species as Reaction Intermediates in the Electrochemical Evolution of Oxygen on Gold Yeo, Boon Siang; Klaus, Shannon L.; Ross, Philip N. ChemPhysChem https://doi.org/10.1002/cphc.201000294	journal	May 2010
Identification of surface optical phonon in wurtzite InN epitaxial thin films by coherent phonon spectroscopy Chang, Y. -M.; Chu, H. W.; Shen, C. -H. Applied Physics Letters, Vol. 90, Issue 7 https://doi.org/10.1063/1.2679358	journal	February 2007

Similar Records

A thermalization energy analysis of the threshold voltage shift in amorphous indium gallium zinc oxide thin film transistors under simultaneous negative gate bias and illumination

Journal Article · Mon Apr 07 00:00:00 EDT 2014 · Journal of Applied Physics · OSTI ID:1254064

Powell, M. J.

Elastic constants and related properties of tetrahedrally bonded BN, AlN, GaN, and InN

Journal Article · Sat Jun 01 00:00:00 EDT 1996 · Physical Review, B: Condensed Matter · OSTI ID:1254064

Kim, K; Lambrecht, W R; Segall, B

Indium Gallium Oxide Alloys: Electronic Structure, Optical Gap, Surface Space Charge, and Chemical Trends within Common-Cation Semiconductors

Journal Article · Mon Jan 11 00:00:00 EST 2021 · ACS Applied Materials and Interfaces · OSTI ID:1254064

Swallow, Jack E. N.; Palgrave, Robert G.; Murgatroyd, Philip A. E.; +7 more

Related Subjects

74 ATOMIC AND MOLECULAR PHYSICS

Title: Surface origin and control of resonance Raman scattering and surface band gap in indium nitride

Citation Formats

References (48)

Similar Records

Related Subjects