Chemical vapor deposition of Ti-Si-N films for diffusion barrier applications

Technical Report · Wed Nov 01 00:00:00 EST 1995

DOI:https://doi.org/10.2172/125078· OSTI ID:125078

Smith, P M; Custer, J S; Jones, R V ^[1]

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1. and others

Structurally disordered refractory ternary films such as titanium silicon nitride (Ti-Si-N) have potential as advanced diffusion barriers in future ULSI metallization schemes. The authors demonstrate chemical vapor deposition (CVD) of Ti-Si-N-containing films in a commercially available single-wafer CVD system using two different Ti precursors, TiCl{sub 4} and tetrakis(diethylamino)titanium (TDEAT). In particular, the TDEAT-based films can be grown conformally with low impurity content, and are promising candidates for advanced diffusion barrier applications.

• Research Organization: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
• Sponsoring Organization: USDOE, Washington, DC (United States)
• DOE Contract Number: AC04-94AL85000
• OSTI ID: 125078
• Report Number(s): SAND-95-1469C; CONF-9510161-3; ON: DE96001945; TRN: AHC29528%%113
• Resource Relation: Conference: Advanced metalization and interconnect systems for ultra large scale integration applications, Portland, OR (United States), 3-5 Oct 1995; Other Information: PBD: [1995]
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING NOT INCLUDED IN OTHER CATEGORIES
36 MATERIALS SCIENCE
INTEGRATED CIRCUITS
FABRICATION
TITANIUM NITRIDES
CHEMICAL VAPOR DEPOSITION
SILICON NITRIDES
PRECURSOR
EXPERIMENTAL DATA
ELECTRIC CONDUCTIVITY
PHASE DIAGRAMS