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Title: Voltage-matched, monolithic, multi-band-gap devices

Patent ·
OSTI ID:1175886

Monolithic, tandem, photonic cells include at least a first semiconductor layer and a second semiconductor layer, wherein each semiconductor layer includes an n-type region, a p-type region, and a given band-gap energy. Formed within each semiconductor layer is a sting of electrically connected photonic sub-cells. By carefully selecting the numbers of photonic sub-cells in the first and second layer photonic sub-cell string(s), and by carefully selecting the manner in which the sub-cells in a first and second layer photonic sub-cell string(s) are electrically connected, each of the first and second layer sub-cell strings may be made to achieve one or more substantially identical electrical characteristics.

Research Organization:
National Renewable Energy Laboratory (NREL), Golden, CO (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
AC36-99GO10337
Assignee:
Midwest Research Institute (Kansas City, MO)
Patent Number(s):
7,095,050
Application Number:
10/275,123
OSTI ID:
1175886
Resource Relation:
Patent File Date: 2002 Feb 28
Country of Publication:
United States
Language:
English