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Title: [100] or [110] aligned, semiconductor-based, large-area, flexible, electronic devices

Patent ·
OSTI ID:1174189

Novel articles and methods to fabricate the same resulting in flexible, large-area, [100] or [110] textured, semiconductor-based, electronic devices are disclosed. Potential applications of resulting articles are in areas of photovoltaic devices, flat-panel displays, thermophotovoltaic devices, ferroelectric devices, light emitting diode devices, computer hard disc drive devices, magnetoresistance based devices, photoluminescence based devices, non-volatile memory devices, dielectric devices, thermoelectric devices and quantum dot laser devices.

Research Organization:
Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
AC05-00OR22725
Assignee:
Goyal, Amit (Knoxville, TN)
Patent Number(s):
8,987,736
Application Number:
12/011,454
OSTI ID:
1174189
Resource Relation:
Patent File Date: 2008 Jan 28
Country of Publication:
United States
Language:
English

References (10)

Carbide/metal composite material and a process therefor patent April 1994
High temperature superconducting thick films patent February 1999
Method of making gate and source lines in TFT LCD panels using pure aluminum metal patent November 1999
Electroplating process for preparing a Ni layer of biaxial texture patent February 2002
Metallic substrates for high temperature superconductors patent September 2002
Conductive and robust nitride buffer layers on biaxially textured substrates patent August 2004
Conductive layer for biaxially oriented semiconductor film growth patent-application February 2006
Method for low-temperature, hetero-epitaxial growth of thin film cSi on amorphous and multi-crystalline substrates and c-Si devices on amorphous, multi-crystalline, and crystalline substrates patent-application September 2006
Photovoltaic Template patent-application March 2007
Irradiation-free, columnar defects comprised of self-assembled nanodots and nanorods resulting in strongly enhanced flux-pinning in YBa2Cu3O7−δ films journal October 2005

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