Residue-free reactive ion etching of 3C-SiC and 6H-SiC in fluorinated mixture plasmas
- Univ. of Cincinnati, OH (United States)
The authors report on residue-free reactive ion etching (RIE) of 3C-SiC and 6H-SiC in mixtures of fluorinated gases consisting of a primary (CHF{sub 3}) and a secondary gas (CF{sub 4}, NF{sub 3}, and SF{sub 6}). The corresponding etch rate, etched surface morphology, anisotropic profile, and process reproducibility are obtained at different levels of CHF{sub 3}. The advantage of this approach is to eliminate gas additives (H{sub 2} and O{sub 2}) while maintaining the residue-free RIE and high process portability. The effect of SiC doping concentration and dopant type on obtaining residue-free RIE is reported along with the effects of plasma pressure and RF power. Etching mechanisms, plasma chemistry, and optimized etching conditions are also discussed.
- Sponsoring Organization:
- USDOE
- OSTI ID:
- 110139
- Journal Information:
- Journal of the Electrochemical Society, Vol. 142, Issue 8; Other Information: PBD: Aug 1995
- Country of Publication:
- United States
- Language:
- English
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