Engineering Nanocolumnar Defect Configurations for Optimized Vortex Pinning in High Temperature Superconducting Nanocomposite Wires
- ORNL
- Waukesha Electric Systems Inc.
- North Carolina A&T State University
High temperature superconducting (HTS), coated conductor wires based on nanocomposite films containing self-assembled, insulating BaZrO3 (BZO) nanocolumnar defects have previously been reported to exhibit enhanced vortex pinning. Here, we report on microstructural design via control of BZO nanocolumns density in YBa2Cu3O7- (YBCO)+BZO nancomposite films to achieve the highest critical current density, Jc(H, ,T). X-ray diffraction and microstructural examination shows increasing number density of epitaxial BZO nanocolumns in the highly cube-textured YBCO matrix with increasing nominal BZO additions. Transport property measurement reveals that an increase in BZO content upto 4 vol% is required to sustain the highest pinning and Jc performance as the magnetic field increases. By growing thicker, single-layer nanocomposite films (~4 m) with controlled density of BZO columnar defects, the critical current (Ic) of ~1000 A/cm at 77 K, self-field and the minimum Ic of 455 A/cm at 65 K and 3 T for all magnetic field orientations were obtained. This is the highest Ic reported to date for films on metallic templates which are the basis for the 2nd generation, coated conductor-based HTS wires.
- Research Organization:
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Shared Research Equipment Collaborative Research Center
- Sponsoring Organization:
- OE USDOE - Office of Electric Transmission and Distribution
- DOE Contract Number:
- DE-AC05-00OR22725
- OSTI ID:
- 1093051
- Journal Information:
- Scientific Reports, Vol. 3; ISSN 2045-2322
- Publisher:
- Nature Publishing Group
- Country of Publication:
- United States
- Language:
- English
Similar Records
Strategic Research on Performance Optimization of YBa2Cu3O7 Coated Conductors
Introduction of Artificial Pinning Center into PLD-YBCO Coated Conductor on IBAD and Self-Epitaxial CeO2 Buffered Metal Substrate