Photovoltaic devices based on high density boron-doped single-walled carbon nanotube/n-Si heterojunctions

Saini, Viney; Li, Zhongrui; Bourdo, Shawn; Kunets, Vasyl P.; Trigwell, Steven; Couraud, Arthur; Rioux, Julien; Boyer, Cyril; Nteziyaremye, Valens; Dervishi, Enkeleda; Biris, Alexandru R.; Salamo, Gregory J.; Viswanathan, Tito; Biris, Alexandru S.

doi:10.1063/1.3531112

Title: Photovoltaic devices based on high density boron-doped single-walled carbon nanotube/n-Si heterojunctions

Journal Article · Thu Jan 13 00:00:00 EST 2011 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.3531112· OSTI ID:1076479

Saini, Viney ^[1]; Li, Zhongrui ^[1]; Bourdo, Shawn ^[1]; Kunets, Vasyl P. ^[2]; Trigwell, Steven ^[3]; Couraud, Arthur ^[4]; Rioux, Julien ^[4]; Boyer, Cyril ^[4]; Nteziyaremye, Valens ^[1]; Dervishi, Enkeleda ^[1]; Biris, Alexandru R. ^[5]; Salamo, Gregory J. ^[2]; Viswanathan, Tito ^[1]; Biris, Alexandru S. ^[1]

Univ. of Arkansas at Little Rock, Little Rock, AR (United States)
Univ. of Arkansas, Fayetteville, AR (United States)
ASRC Aerospace Corp., NASA Kennedy Space Center, FL (United States)
Univ. of Arkansas at Little Rock, Little Rock, AR (United States); Ecole d'Ingenieurs du CESI-EIA, La Couronne (France)
National Institute for Research and Development of Isotopic and Molecular Technologies, Napoca (Romania)

A simple and easily processible photovoltaic device has been developed based on borondoped single-walled carbon nanotubes (B-SWNTs) and n-type silicon (n-Si) heterojunctions. The single-walled carbon nanotubes (SWNTs) were substitutionally doped with boron atoms by thermal annealing, in the presence of B₂O₃. The samples used for these studies were characterized by Raman spectroscopy, thermal gravimetric analysis (TGA), transmission electron microscopy (TEM), and x-ray photoelectron spectroscopy (XPS). The fully functional solar cell devices were fabricated by airbrush deposition that generated uniform B-SWNT films on top of the n-Si substrates. The carbon nanotube films acted as exciton-generation sites, charge collection and transportation, while the heterojunctions formed between B-SWNTs and n-Si acted as charge dissociation centers. The current-voltage characteristics in the absence of light and under illumination, as well as optical transmittance spectrum are reported here. It should be noted that the device fabrication process can be made amenable to scalability by depositing direct and uniform films using airbrushing, inkjet printing, or spin-coating techniques.

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Research Organization:: University of Arkansas at Little Rock, Little Rock, AR (United States)

Sponsoring Organization:: USDOE Office of Science (SC)

Grant/Contract Number:: FG36-06GO86072

OSTI ID:: 1076479

Journal Information:: Journal of Applied Physics, Vol. 109, Issue 1; ISSN 0021-8979

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 16 works

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Carbon/Silicon Heterojunction Solar Cells: State of the Art and Prospects Li, Xinming; Lv, Zheng; Zhu, Hongwei Advanced Materials, Vol. 27, Issue 42 https://doi.org/10.1002/adma.201502999	journal	September 2015
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Photovoltaic properties of the p-CuO/n-Si heterojunction prepared through reactive magnetron sputtering Gao, Fei; Liu, Xiao-Jing; Zhang, Jun-Shan Journal of Applied Physics, Vol. 111, Issue 8 https://doi.org/10.1063/1.4704382	journal	April 2012
Organic Solar Cells: A Review of Materials, Limitations, and Possibilities for Improvement Abdulrazzaq, Omar A.; Saini, Viney; Bourdo, Shawn Particulate Science and Technology, Vol. 31, Issue 5 https://doi.org/10.1080/02726351.2013.769470	journal	September 2013

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14 SOLAR ENERGY
carbon nanotubes doping
solar cells
boron
boron nanotubes
organic-inorganic
p-type single wall carbon nanotubes
n-type silicon

Title: Photovoltaic devices based on high density boron-doped single-walled carbon nanotube/n-Si heterojunctions

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