Radiation Hard AlGaN Detectors and Imager
Conference
·
OSTI ID:1056318
Radiation hardness of AlGaN photodiodes was tested using a 65 MeV proton beam with a total proton fluence of 3x10{sup 12} protons/cm{sup 2}. AlGaN Deep UV Photodiode have extremely high radiation hardness. These new devices have mission critical applications in high energy density physics (HEDP) and space explorations. These new devices satisfy radiation hardness requirements by NIF. NSTec is developing next generation AlGaN optoelectronics and imagers.
- Research Organization:
- Nevada Test Site (NTS), Mercury, NV (United States)
- Sponsoring Organization:
- USDOE National Nuclear Security Administration (NNSA)
- DOE Contract Number:
- DE-AC52-06NA25946
- OSTI ID:
- 1056318
- Report Number(s):
- DOE/NV/25946-1507
- Resource Relation:
- Conference: 19th Topical Conference High-Temperature Plasma Diagnostics, Monterey, CA, May 6-10, 2012
- Country of Publication:
- United States
- Language:
- English
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