Effects of reliability screens of MOS charge trapping
The effects of pre-irradiation elevated-temperature bias stresses on the radiation hardness of field-oxide transistors have been investigated as a function of stress temperature, time, and bias. Both the stress temperature and time are found to have a significant impact on radiation-induced charge buildup in these transistors. Specifically, an increase in either the stress temperature or time causes a much larger negative shift (towards depletion) in the I-V characteristics of the n-channel field-oxide transistors. This increased shift in the transistor I-V characteristics with stress temperature and time suggests that the mechanisms responsible for the stress effects are thermally activated. An activation energy of {approximately}0.38 eV was measured. The stress bias was found to have no impact on radiation-induced charge buildup in these transistors. The observed stress temperature, time, and bias dependencies appears to be consistent with the diffusion of molecular hydrogen during a given stress period. These results have important implications for the development of hardness assurance test methods.
- Research Organization:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 105061
- Report Number(s):
- SAND-95-0514C; CONF-9509107-1; ON: DE95017838
- Resource Relation:
- Conference: 3. European symposium on radiation and its effects on components and systems (RADECS 95), Arcachon (France), 18-22 Sep 1995; Other Information: PBD: [1995]
- Country of Publication:
- United States
- Language:
- English
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