Point Defects in Pb-, Bi-, and In-Doped CdZnTe Detectors:Deep-Level Transient Spectroscopy (DLTS) Measurements
Journal Article
·
· Journal of Electronic Materials
OSTI ID:1044733
We studied, by current deep-level transient spectroscopy (I-DLTS), point defects induced in CdZnTe detectors by three dopants: Pb, Bi, and In. Pb-doped CdZnTe detectors have a new acceptor trap at around 0.48 eV. The absence of a V{sub Cd} trap suggests that all Cd vacancies are compensated by Pb interstitials after they form a deep-acceptor complex [[Pb{sub Cd}]{sup +}-V{sub Cd}{sup 2-}]{sup -}. Bi-doped CdZnTe detectors had two distinct traps: a shallow trap at around 36 meV and a deep donor trap at around 0.82 eV. In detectors doped with In, we noted three well-known traps: two acceptor levels at around 0.18 eV (A-centers) and 0.31 eV (V{sub Cd}), and a deep trap at around 1.1 eV.
- Research Organization:
- Brookhaven National Lab. (BNL), Upton, NY (United States)
- Sponsoring Organization:
- USDOE SC OFFICE OF SCIENCE (SC)
- DOE Contract Number:
- DE-AC02-98CH10886
- OSTI ID:
- 1044733
- Report Number(s):
- BNL-97257-2012-JA; JECMA5; NN2001000; TRN: US201214%%782
- Journal Information:
- Journal of Electronic Materials, Vol. 41, Issue 3; ISSN 0361-5235
- Country of Publication:
- United States
- Language:
- English
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