Point Defects in CdZnTe Crystals Grown by Different Techniques
Journal Article
·
· Journal of Electronic Materials
We studied, by current deep-level transient spectroscopy (I-DLTS), point defects in CdZnTe detectors grown by different techniques. We identified 12 different traps with energy levels from 7 meV to 1.1 eV. Although the levels of most of the identified defects were independent of the crystal growth techniques, nevertheless there were some associated differences in the traps energies and densities.
- Research Organization:
- Brookhaven National Lab. (BNL), Upton, NY (United States)
- Sponsoring Organization:
- USDOE SC OFFICE OF SCIENCE (SC)
- DOE Contract Number:
- DE-AC02-98CH10886
- OSTI ID:
- 1042166
- Report Number(s):
- BNL-97844-2012-JA; JECMA5; TRN: US201212%%577
- Journal Information:
- Journal of Electronic Materials, Vol. 40, Issue 3; ISSN 0361-5235
- Country of Publication:
- United States
- Language:
- English
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