Hard X-ray Nano Patterning using a Sectioned Multilayer

Journal Article · Sat Dec 31 00:00:00 EST 2011 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.3552589· OSTI ID:1041861

Lee, S; Cho, I; Kim, J; Yan, H; Conley, R; Liu, C; Macrander, A; Maser, J; Stephenson, G

We report a hard x-ray patterning capable of drawing lines with a width below 100 nm using x-rays at 0.165 nm. A specially prepared mask based on multilayer growth technology was used as an x-ray mask effectively. The x-ray Talbot effect in near field was investigated and utilized in the patterning. Since multilayers with a few nanometer layer spacing are readily available, the proposed hard x-ray nano patterning, free of the limit imposed by the Rayleigh criterion in optical range, can potentially be an ultimate optical lithography technique.

• Research Organization: Brookhaven National Lab. (BNL), Upton, NY (United States)
• Sponsoring Organization: USDOE SC OFFICE OF SCIENCE (SC)
• DOE Contract Number: DE-AC02-98CH10886
• OSTI ID: 1041861
• Report Number(s): BNL-97539-2012-JA; JAPIAU; TRN: US201212%%273
• Journal Information: Journal of Applied Physics, Vol. 109, Issue 4; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
RAYLEIGH SCATTERING
BNL
PHYSICS