In Situ Synchrotron Based X-ray Fluorescence and Scattering Measurements During Atomic Layer Deposition: Initial Growth of HfO2 on Si and Ge Substrates

Journal Article · Sat Dec 31 00:00:00 EST 2011 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3598433· OSTI ID:1041799

Devloo-Casier, K; Dendooven, J; Ludwig, K; Lekens, G; DHaen, J; Detavernier, C

The initial growth of HfO{sub 2} was studied by means of synchrotron based in situ x-ray fluorescence (XRF) and grazing incidence small angle x-ray scattering (GISAXS). HfO{sub 2} was deposited by atomic layer deposition (ALD) using tetrakis(ethylmethylamino)hafnium and H{sub 2}O on both oxidized and H-terminated Si and Ge surfaces. XRF quantifies the amount of deposited material during each ALD cycle and shows an inhibition period on H-terminated substrates. No inhibition period is observed on oxidized substrates. The evolution of film roughness was monitored using GISAXS. A correlation is found between the inhibition period and the onset of surface roughness.

• Research Organization: Brookhaven National Lab. (BNL), Upton, NY (United States)
• Sponsoring Organization: USDOE SC OFFICE OF SCIENCE (SC)
• DOE Contract Number: DE-AC02-98CH10886
• OSTI ID: 1041799
• Report Number(s): BNL-97477-2012-JA; APPLAB; TRN: US201212%%211
• Journal Information: Applied Physics Letters, Vol. 98, Issue 23; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CORRELATIONS
DEPOSITION
GROWTH
HAFNIUM COMPOUNDS
INCIDENCE ANGLE
INHIBITION
LAYERS
MATERIALS
OXIDATION
ROUGHNESS
SMALL ANGLE SCATTERING
SUBSTRATES
SURFACES
SYNCHROTRON RADIATION
THIN FILMS
X-RAY FLUORESCENCE ANALYSIS