III-nitride nanowires : novel materials for solid-state lighting.
- Los Alamos National Laboratory, Los Alamos, NM
- NIST, Gaithersburg, MD
Although planar heterostructures dominate current solid-state lighting architectures (SSL), 1D nanowires have distinct and advantageous properties that may eventually enable higher efficiency, longer wavelength, and cheaper devices. However, in order to fully realize the potential of nanowire-based SSL, several challenges exist in the areas of controlled nanowire synthesis, nanowire device integration, and understanding and controlling the nanowire electrical, optical, and thermal properties. Here recent results are reported regarding the aligned growth of GaN and III-nitride core-shell nanowires, along with extensive results providing insights into the nanowire properties obtained using cutting-edge structural, electrical, thermal, and optical nanocharacterization techniques. A new top-down fabrication method for fabricating periodic arrays of GaN nanorods and subsequent nanorod LED fabrication is also presented.
- Research Organization:
- Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 1039016
- Report Number(s):
- SAND2010-8921C; TRN: US201209%%109
- Resource Relation:
- Conference: Proposed for presentation at the SPIE Photonics West Conference 2011 held January 22-27, 2011 in San Francisco, CA.
- Country of Publication:
- United States
- Language:
- English
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