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Title: Ferroelectric thin film bismuth titanate prepared from acetate precursors

Conference ·
OSTI ID:10185287
; ;  [1]; ;  [2]
  1. Alfred Univ., NY (United States)
  2. Sandia National Labs., Albuquerque, NM (United States)

Bismuth titanate (Bi{sub 4}Ti{sub 3}O{sub 12}) thin films were fabricated by spin coat deposition followed by rapid thermal processing (RTP). Acetate derived solutions for deposition were synthesized by blending bismuth acetate in aqueous acetic acid and then adding titanium acetate. A series of electrically insulating, semiconducting and conducting substrates were evaluated for Bi{sub 4}Ti{sub 3}O{sub 12} film deposition. While X-ray diffraction and TEM analyses indicated that the initial perovskite crystallization temperature was 500{degrees}C or less for these Bi{sub 4}Ti{sub 3}O{sub 12} films, a 700{degrees}C crystallization treatment was used to obtain single phase perovskite films. Bi{sub 4}Ti{sub 3}O{sub 12} film crystallographic orientation was shown to depend on three factors: substrate surface morphology, the number of coating layers and thermal processing. While preferred c-direction orientation was observed for Bi{sub 4}Ti{sub 3}O{sub 12} films deposited on silver foil substrates, preferred a-direction orientation was obtained for films deposited on both Si and Pt coated Si wafers. The films were dense, smooth, crack free, and had grain sizes ranging from 20 nm to 100 nm. Film thickness and refractive index were determined using a combination of ellipsometry, waveguide refractometry and TEM measurements. Both low field dielectric and ferroelectric properties were measured for an 800 nm thick film deposited on a Pt coated MgO substrate. A remanent polarization of 38 {mu}C/cm{sup 2} and a coercive field of 98 kV/cm were measured for this film that was crystallized at 700{degrees}C.

Research Organization:
Sandia National Labs., Albuquerque, NM (United States)
Sponsoring Organization:
USDOE, Washington, DC (United States)
DOE Contract Number:
AC04-94AL85000
OSTI ID:
10185287
Report Number(s):
SAND-94-2276C; CONF-940839-1; ON: DE95000538; TRN: 94:008882
Resource Relation:
Conference: 9. international symposium on the application of ferroelectrics,University Park, PA (United States),7-10 Aug 1994; Other Information: PBD: [1994]
Country of Publication:
United States
Language:
English