Recombination and metastability in amorphous silicon and silicon germanium alloys. Annual subcontract report, 1 February 1991--31 January 1992
- North Carolina Univ., Chapel Hill, NC (United States)
This report describes the first year of a continuing research study to understand how recombination, trapping, and band-mobility modification affecting the electronic properties of amorphous semiconductors can be measured, characterized, and described by an appropriate spectrum of defect states, and how light-induced defects in a-Si:H and native defects in a-SiGe:H affect transport properties in these materials. The objective was to determine how the Staebler-Wronski defects affect the electronic processes in a-Si:H and a-SiGe:H films. To do this, electroluminescence (EL) and forward bias current in p-i-n devices (i-layer thickness > 2 {mu}m) were studied both experimentally and theoretically before and after light soaking. A simple picture was developed to compare forward bias current to the EL signal. The result was unexpected: the product of the final current times the rise time was not constant before and after light soaking as expected from the concept of gain band width, but instead changed radically. The rise time t{sub x} increased by more than one order of magnitude while the final current I{sub f} did not change significantly with light soaking. On the other hand the I{sub f}t{sub x} product did hold close to a constant when only the applied voltage changed.
- Research Organization:
- National Renewable Energy Lab. (NREL), Golden, CO (United States); North Carolina Univ., Chapel Hill, NC (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- AC02-83CH10093
- OSTI ID:
- 10170144
- Report Number(s):
- NREL/TP-451-4962; ON: DE92010593
- Resource Relation:
- Other Information: PBD: Jul 1992
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
36 MATERIALS SCIENCE
SOLAR CELLS
SEMICONDUCTOR MATERIALS
GERMANIUM ALLOYS
METASTABLE STATES
RECOMBINATION
SILICON ALLOYS
PROGRESS REPORT
SILICON
AMORPHOUS STATE
SILICON SOLAR CELLS
LUMINESCENCE
SEMICONDUCTOR JUNCTIONS
TRAPPING
ELECTRICAL TESTING
AMORPHOUS SILICON
SILICON GERMANIUM
PHOTOVOLTAICS
METASTABILITY
140501
360606
360602
PHOTOVOLTAIC CONVERSION
PHYSICAL PROPERTIES
STRUCTURE AND PHASE STUDIES