Comparison of AlN films grown by RF magnetron sputtering and ion-assisted molecular beam epitaxy

Conference · Thu Apr 01 00:00:00 EST 1993

OSTI ID:10165289

Chan, J; Fu, T; Cheung, N W; Ross, J; Newman, N; Rubin, M

Crystalline aluminum nitride (AlN) thin films were formed on various substrates by using RF magnetron sputtering of an A1 target in a nitrogen plasma and also by ion-assisted molecular beam epitaxy (IAMBE). Basal-oriented AlN/(111) Si showed a degradation of crystallinity with increased substrate temperature from 550 to 770 C, while the crystallinity of AlN/(0001) A1{sub 2}O{sub 3} samples improved from 700 to 850 C. The optical absorption characteristics of the AlN/(0001) A1{sub 2}O{sub 3} films as grown by both deposition methods revealed a decrease in subbandgap absorption with increased substrate temperature.

• Research Organization: Lawrence Berkeley Lab., CA (United States)
• Sponsoring Organization: USDOE, Washington, DC (United States); Department of Defense, Washington, DC (United States)
• DOE Contract Number: AC03-76SF00098
• OSTI ID: 10165289
• Report Number(s): LBL-35660; CONF-930405-56; ON: DE94014914; CNN: Contract F49620-90-C-0029
• Resource Relation: Conference: Spring meeting of the Materials Research Society,San Francisco, CA (United States),12-16 Apr 1993; Other Information: PBD: Apr 1993
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM NITRIDES
DEPOSITION
OPTICAL PROPERTIES
SPUTTERING
MOLECULAR BEAM EPITAXY
ION BEAMS
CRYSTAL STRUCTURE
ALUMINIUM OXIDES
THIN FILMS
360202
360204
STRUCTURE AND PHASE STUDIES
PHYSICAL PROPERTIES