Fabrication and dielectric property of ferroelectric PLZT films grown on metal foils.
- Energy Systems
We have grown ferroelectric Pb{sub 0.92}La{sub 0.08}Zr{sub 0.52}Ti{sub 0.48}O{sub 3} (PLZT) films on platinized silicon and LaNiO{sub 3}-buffered nickel substrates by chemical solution deposition using a sol-gel process based on acetic acid chemistry. The following measurements were obtained under zero-bias field: relative permittivity of {approx}960 and dielectric loss of {approx}0.04 on the PLZT film grown on Pt/Si substrates, and relative permittivity of {approx}820 and dielectric loss of {approx}0.06 on the PLZT film grown on LNO-buffered Ni substrates. In addition, a relative permittivity of 125 and dielectric loss of 0.02 were measured at room temperature under a high bias field of 1 x 10{sup 6} V/cm on PLZT deposited on LNO-buffered nickel substrate. Furthermore, a steady-state leakage current density of {approx}8.1 x 10{sup -9} A/cm{sup 2} and mean breakdown field strength of 1.7 x 10{sup 6} V/cm were measured at room temperature. Finally, remanent polarization (P{sub r}) of {approx} 2.0 x 10{sup -5} C/cm{sup 2}, coercive electric field (E{sub c}) of {approx}3.4 x 10{sup 4} V/cm, and energy density of {approx}45 J/cm{sup 3} were determined from room-temperature hysteresis loop measurements on PLZT/LNO/Ni film-on-foil capacitors with 250-{micro}m-diameter platinum top electrodes.
- Research Organization:
- Argonne National Lab. (ANL), Argonne, IL (United States)
- Sponsoring Organization:
- EE
- DOE Contract Number:
- DE-AC02-06CH11357
- OSTI ID:
- 1014837
- Report Number(s):
- ANL/ES/JA-68881; TRN: US201111%%375
- Journal Information:
- Mater. Res. Bull., Vol. 46, Issue 7 ; Jul. 2011
- Country of Publication:
- United States
- Language:
- ENGLISH
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