Self-stressing test structures used for high-frequency electromigration

Conference · Tue Feb 01 00:00:00 EST 1994

OSTI ID:10121208

Snyder, E S; Pierce, D G; Campbell, D V; Swanson, S E

We demonstrate for the first time high frequency (500 mhz) electromigration at the wafer-level using on-chip, self-stressing test structures. Since the stress temperature, frequency, duty cycle and current are controlled by DC signals in these structures, we used conventional DC test equipment without any special modifications (such as high frequency cabling, high temperature probe cards, etc.). This structure significantly reduces the cost of performing realistic high frequency electromigration experiments.

• Research Organization: Sandia National Labs., Albuquerque, NM (United States)
• Sponsoring Organization: USDOE, Washington, DC (United States)
• DOE Contract Number: AC04-94AL85000
• OSTI ID: 10121208
• Report Number(s): SAND-94-0248C; CONF-940369-1; ON: DE94006142; BR: GB0103012
• Resource Relation: Conference: Institute of Electrical and Electronics Engineers (IEEE) international conference on microelectronic test structures,San Diego, CA (United States),22-24 Mar 1994; Other Information: PBD: [1994]
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
INTEGRATED CIRCUITS
ELECTROPHORESIS
FABRICATION
RELIABILITY
PROCESS CONTROL
QUALITY CONTROL
MHZ RANGE 100-1000
TESTING
426000
COMPONENTS
ELECTRON DEVICES AND CIRCUITS