Bonding of hydrogen implanted at 80K into III-IV semiconductors
Hydrogen implantation at 80K is shown to introduce As-H centers in GaAs and InAs, and P-H centers in InP. These As(P)-H centers anneal between 150 and 300K. By analogy to suggested defect assignments in electron-irradiated GaAs, it is suggested that the sites for the As(P)-H centers are metastable defects such as close vacancy-interstitial pairs. In contrast to GaAs, where absorption by Ga-H centers increases upon loss of As-H, no absorption attributable to In-H was observed in either InAs or InP. Hydrogen in an As vacancy is the suggested model for Ga-H centers. If such vacancies are thermally unstable in In-based compounds, it would explain an absence of In-H bonds and may reduce the capability for ion implantation to produce electrical isolation in In-based compound semiconductors. 19 refs., 6 figs.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- AC04-76DP00789
- OSTI ID:
- 10107788
- Report Number(s):
- SAND-91-1477C; CONF-911202-6; ON: DE92004354
- Resource Relation:
- Conference: Annual fall meeting of the Materials Research Society (MRS),Boston, MA (United States),2-6 Dec 1991; Other Information: PBD: [1991]
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
GALLIUM ARSENIDES
ION IMPLANTATION
INDIUM ARSENIDES
INDIUM PHOSPHIDES
HYDROGEN
CHEMICAL BONDS
ANNEALING
ABSORPTION SPECTRA
ARSENIC HYDRIDES
INDIUM HYDRIDES
PHOSPHORUS HYDRIDES
IRRADIATION
ELECTRON BEAMS
CRYSTAL DEFECTS
PHYSICAL RADIATION EFFECTS
360601
360605
665300
PREPARATION AND MANUFACTURE
RADIATION EFFECTS
INTERACTIONS BETWEEN BEAMS AND CONDENSED MATTER