Fabrication of p-n junctions in as-grown ZnMgO/ZnO films
- University of Florida, Gainesville
- University of Florida
- ORNL
We achieved p-(Zn,Mg)O by doping with phosphorous and the conduction type was confirmed by capacitance-voltage properties of metal/insulator/p-(Zn,Mg)O:P diode structures as well as Hall measurements. The p-(Zn,Mg)O:P/n-ZnO junction was grown by pulsed laser deposition on bulk ZnO doped with Sn. Without post-growth annealing, the phosphorous-doped ZnMgO showed p-type conductivity (hole density {approx}10{sup 16} cm{sup -3}, mobility {approx}6 cm{sup 2}V{sup -1}s{sup -1}) in the as-grown state. The metal contacts in top-to-bottom p-n junctions were made with Ni/Au as the p-ohmic and Ti/Au as the backside n-ohmic contact. The p-contacts showed improved characteristics after annealing up to 350-400 C, but the n-contacts were ohmic as-deposited. The simple, low temperature growth (<=500 C) and processing sequence (<=400 C) shows the promise of ZnO for applications such as low-cost UV light emitters and transparent electronics.
- Research Organization:
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC)
- DOE Contract Number:
- DE-AC05-00OR22725
- OSTI ID:
- 1003476
- Resource Relation:
- Conference: Fifth International Conference on Solid State Lighting, San Diego, CA, USA, 20050801, 20050804
- Country of Publication:
- United States
- Language:
- English
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